期刊
PHYSICA SCRIPTA
卷 T157, 期 -, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0031-8949/2013/T157/014046
关键词
-
资金
- Ministry of Education, Science and Technological Development of the Republic of Serbia [III45003]
In this work, single crystals of bismuth silicon oxide (BSO; Bi12SiO20) have been grown by the Czochralski method. The growth conditions were studied. The critical diameter and the critical rate of rotation were calculated. Suitable polishing and etching solutions were determined. The structure of the Bi12SiO20 has been investigated by x-ray diffraction (XRD), and Raman and Fourier transform infrared spectroscopy (FTIR) spectroscopy. The results obtained are discussed and compared with the published data. The pale yellow Bi12SiO20 single crystals prepared were without cores. Using spectroscopic measurements 19 Raman and 5 IR modes were observed.
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