期刊
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
卷 54, 期 -, 页码 341-345出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.physe.2013.08.001
关键词
MgZnO/ZnO heterostructure; Polarization roughness scattering; Low-temperature mobility
资金
- China Postdoctoral Science Special Foundation [201104659]
- China Postdoctoral Science Foundation [20100481322]
- Foundation of State Key Lab on Integrated Service Networks [ISN1003006]
- Fundamental Research Funds for the Central Universities [K50511010023]
- 111 Project of China [B08038]
Quantum transport properties of two-dimensional electron gas (2DEG) in undoped MgZnO/ZnO heterostructures with polarization charge effect have been investigated theoretically. Polarization roughness scattering (PRS) combining polarization charge and interface roughness scattering was proposed as a new scattering mechanism. It was found that the carriers confined in the heterostructures (HSs) would be scattered from polarization charges when they were moving along the in-plane and PRS played a very important role for the low-temperature electron mobility when the electron density N-s exceeded 1.0e11 cm(-2), especially in a higher electron density region. With PRS, the experimental data on the density dependence of 2DEG mobility in the MgZnO/ZnO HSs under study can be well reproduced. The study indicates that the improved processing techniques providing a smooth interface and a good separation between the 2DEG electrons and the polarization charges should be significant for the quantum device's performance. Crown Copyright (C) 2013 Published by Elsevier B.V. All rights reserved.
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