期刊
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
卷 44, 期 7-8, 页码 1776-1779出版社
ELSEVIER
DOI: 10.1016/j.physe.2011.12.017
关键词
-
资金
- CNPq
- FAPESP
Self assembled Germanium nanowires' devices were fabricated in order to investigate the carrier's transport mechanism in these structures. Temperature-dependent resistance measurements exhibited a semiconducting behaviour in which the variable range hopping acts as the dominant mechanism governing the electron transport. These findings were supported by photocurrent measurements and by the low carrier's mobility obtained from a single nanowire device. The presence of a hopping process can be explained taking into account the localization of states, which in turn is generated by the disorder. (C) 2011 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据