Optimal design of heterostructure tunnel diode with nonlinear current-voltage characteristic

Optimal design applied to an Al xi Ga1-xi As heterostructure tunnel diode is used to achieve a parametrically defined nonlinear current-voltage characteristic. The design predicts that a significant reduction in spurious frequency components from a switching RF mixer can be realized using a device that is less than 17 nm thick. (c) 2012 Elsevier B.V. All rights reserved.