期刊
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
卷 43, 期 1, 页码 102-105出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.physe.2010.06.030
关键词
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资金
- NSFC [60625403, 90707006]
- 973 Projects [2006CB302701]
- National Science & Technology Major Project [2009ZX02035-001]
Shape controllable silicon nanowires (SiNWs) have been fabricated with CMOS compatible top-down fabrication process by carefully designing the oxidation temperature, time, and the original shape of Si wires. Higher oxidation temperature favors the formation of circular SiNWs, since the impact of oxidation retardation on the oxidation rate at sharp corners is reduced, and the discrepancy between the oxidation rates of different SiNW planes is minimized. In our work, high quality circular SiNWs with diameter of 5 nm have been successfully fabricated at high oxidation temperature of 950 C. Pentagonal, triangular, and circular SiNWs with diameter around 10 nm have also been obtained at 950 degrees C by controlling the oxidation time and the original shape of the wires. (c) 2010 Elsevier B.V. All rights reserved.
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