期刊
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
卷 40, 期 7, 页码 2278-2282出版社
ELSEVIER
DOI: 10.1016/j.physe.2007.11.034
关键词
nanotubes; transistor; hysteresis
We present a technique for hysteresis suppression in single-wall nanotube field effect transistors (SWNT-FETs) using chemical functionalization. We selectively modify the electrode surfaces and the device channel area with self-assembled monolayers (SAMs) of octanethiol and aminopropyltriethoxysilane (APTES), respectively. These can efficiently prevent surface adsorption of water molecules. We show that hysteresis is suppressed, with a 15 times decrease in hysteresis gap compared to the conventional SWNT-FETs on bare SiO2/Si. (C) 2007 Elsevier B.V. All rights reserved.
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