期刊
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
卷 40, 期 6, 页码 2204-2206出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.physe.2007.11.012
关键词
nanowires; MOVPE; photoluminescence; InP
We have investigated the optical properties of single InP nanowires (NWs) grown by selective-area metalorganic vapor phase epitaxy. Systematic measurements on several single NWs revealed that some of they exhibited good optical quality at low temperature. Band gap energy of InP NWs with wurtzite crystal structure was found to be larger by about 88meV than that of zincblende InP, in good agreement with theoretical prediction. (C) 2007 Elsevier B.V. All rights reserved.
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