4.5 Article

Electronic structure of CdTe using GGA plus USIC

期刊

PHYSICA B-CONDENSED MATTER
卷 452, 期 -, 页码 119-123

出版社

ELSEVIER
DOI: 10.1016/j.physb.2014.07.015

关键词

Electronic structure; Gap correction; Cadmium telluride

资金

  1. FONDECYT [1110602, 1130437]

向作者/读者索取更多资源

A simple method to obtain a gap-corrected band structure of cadmium telluride within density Functional theory is presented. On-site Coulomb self-interaction-like correction potential has been applied to the 5p-shell of Te and the 4d-shell of Cd. The predicted physical properties are similar to or better than those obtained with hybrid functionals and at largely reduced computational cost. In addition to the corrected electronic structure, the lattice parameters and the bulk modulus are improved. The relative stabilities of the different phases (zincblende, wurtzite, rocksalt and cinnabar) are preserved. The formation energy of the cadmium vacancy remains close to the values obtained from hybrid functional calculations. (C) 2014 Elsevier B.V. All rights reserved,

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.5
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据