期刊
PHYSICA B-CONDENSED MATTER
卷 407, 期 15, 页码 2838-2840出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.physb.2011.08.035
关键词
Al1-xInxN/AIN/GaN heterostructures; Atomic Force Microscopy; Current-AFM; V-defects; In segregation; Local conductivity
GaN layers and Al1-xInxN/AIN/GaN heterostructures have been studied by scanning probe microscopy methods. Threading dislocations (TDs), originating from the GaN (0 00 1) layer grown on sapphire, have been investigated. Using Current-Atomic Force Microscopy (C-AFM) TDs have been found to be highly conductive in both GaN and AlInN, while using semi-contact AFM (phase-imaging mode) indium segregation has been traced at TDs in AlInN/AIN/GaN heterostructures. It has been assessed that In segregation is responsible for high conductivity at dislocations in the examined heterostructures. (C) 2011 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据