期刊
PHYSICA B-CONDENSED MATTER
卷 403, 期 19-20, 页码 3553-3558出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.physb.2008.05.025
关键词
Bi2-xMnxSe3; Single crystals; Transport properties; Magnetic properties; Point defects
资金
- Ministry of Education of the Czech Republic [MSM 0021620834]
- [MSM 0021627501]
Single crystals of Bi2Se3 doped with Mn (c(Mn) = 0-3.0 x 10(19) atoms/cm(3)) were grown using a modified Bridgman method. The prepared samples were characterized by X-ray diffraction and chemical analysis, and subsequently investigated by measurements of the reflectivity in the plasma-resonance-frequency region and by measurements of the temperature and magnetic field dependencies of the magnetization, specific heat and transport properties. The results show that incorporation of Mn atoms in the crystal structure leads to an increase of the free-electron concentration, as well as to an increase of the mobility of the free electrons. The Mn2+ valence state of the Mn ions has been established by magnetic measurements, which show a different behavior than the scenario proposed by Choi et al. [J. Choi, H.-W. Lee, B.-S. Kim, S. Choi, J. Choi, J. H. Song and S. Cho, J. Appl. Phys. 97, 10D324 (2005)]. The observations are explained in terms of the point-defect model, which is based on the idea that the Mn impurities create substitutional defects of the Mn'(Bi)-type and reduce the concentration of antistructure Bi'(Se) defects. (c) 2008 Elsevier B.V. All rights reserved.
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