期刊
PHILOSOPHICAL MAGAZINE
卷 93, 期 6, 页码 681-689出版社
TAYLOR & FRANCIS LTD
DOI: 10.1080/14786435.2012.728009
关键词
topological insulator; bismuth selenide; bismuth telluride; plasma etching; Raman spectroscopy; atomic force microscopy
类别
资金
- Defense Advanced Research Projects Agency
- Miller Family Endowment
Plasma etching is an important tool in nano-device fabrication. We report a study on argon plasma etching of topological insulator materials Bi2Se3, Bi2Te3, Sb2Te3 and Bi2Te2Se using exfoliated flakes (with starting thicknesses of approximate to 100nm) derived from bulk crystals. We present data mainly from atomic force microscopy (AFM) and Raman spectroscopy. Through AFM measurements, plasma exposure is observed to decrease the thickness of our samples and increase surface roughness (with height fluctuations reaching as large as approximate to 20nm). We extract an etching rate for each type of material. Plasma exposure also causes a widening (especially ) of the characteristic Raman peaks, with no significant change in peak position. The overall Raman intensity is observed to initially increase then decrease sharply after the samples are etched below approximate to 20nm in thickness. Our findings are valuable for understanding the effects of argon plasma etching on topological insulator materials.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据