期刊
PHILOSOPHICAL MAGAZINE
卷 89, 期 28-30, 页码 2587-2598出版社
TAYLOR & FRANCIS LTD
DOI: 10.1080/14786430902919489
关键词
a-Si:H; crystalline interface; Si; solar cells
类别
资金
- US Department of Energy [DE-AC36-08-GO28308]
The heterojunction crystalline silicon (c-Si) solar cell is one of the most promising cell structures for high-performance and low-cost solar electricity generation. Efficiencies of more than 22% and the highest open-circuit voltage (0.739 V) for c-Si solar cells have been achieved by the Sanyo group with this structure. A thin intrinsic layer of hydrogenated amorphous silicon combined with doped layers effectively passivates the c-Si surface, reducing surface defects, but also allows carriers to pass through the passivating layer without significant loss. It is this feature that makes a-Si: H uniquely different than other dielectric passivation layers, such as silicon dioxide or silicon nitride. The heterojunction structure uses wider bandgap materials to contact c-Si, preventing carriers from moving onto the wrong side of the junction and then recombining. In this paper, we will review c-Si solar cells with hydrogenated amorphous silicon emitters and back contacts.
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