期刊
ORGANIC ELECTRONICS
卷 15, 期 1, 页码 211-215出版社
ELSEVIER
DOI: 10.1016/j.orgel.2013.10.026
关键词
High current densities; Organic field-effect transistor; Transconductance; Kelvin probe microscopy; Space charges
资金
- ERC [StG 2012-306826 e-GAMES]
- Networking Research Center on Bioengineering, Biomaterials and Nanomedicine (CIBER-BBN)
- DGI (Spain) [POMAS CTQ2010-19501/BQU]
- Generalitat de Catalunya [2009SGR516, TEC 2011-27859-CO2]
The understanding of the charge carrier transport in electronic materials is of crucial interest for the design of efficient devices including especially the restraints that arise from device miniaturization. In this work the performance of organic thin-film and single crystal field-effect transistors with the same active material was studied in detail focusing on the high current density regime, where a pronounced non-hysteretic maximum in the transconductance was found. Interestingly, in this operation mode for both, thin films and single crystals, comparable densities of free and gate-induced charge carriers were estimated. Kelvin probe microscopy was used to measure the contact potential difference and the electrical field along the transistor channel during device operation exhibiting the formation of local space charges in the high current density regime. (C) 2013 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据