Room-temperature magnetoresistance in organic spin-valves based on a Co2MnSi Heusler alloy

We report room-temperature magnetoresistance in sandwich structures consisting of Co2MnSi/organic spacer/Co. We have prepared the epitaxial films of a Heusler alloy Co2MnSi on MgO (001) by pulsed laser deposition, followed by thermal depositions of organic and Co layers. The spin-valve with an organic layer of N, N-bis (3-methylphenyl)-N, N-diphenylbenzidine exhibited a positive magnetoresistance ratio of up to 7.8%, which was the highest value among organic spin-valves at room temperature. (C) 2013 Elsevier B.V. All rights reserved.