High performance inkjet-printed C60 fullerene thin-film transistors: Toward a low-cost and reproducible solution process

We have demonstrated high performance inkjet-printed n-channel thin-film transistors (TFTs) using C-60 fullerene as a channel material. Highly uniform amorphous C-60 thin-film patterns were fabricated on a solution-wettable polymer gate dielectric layer by inkjet-printing and vacuum drying process. Fabricated C-60 TFTs shows great reproducibility and high performance; field-effect mobilities of 2.2-2.4 cm(2) V-1 s(-1), threshold voltages of 0.4-0.6 V, subthreshold slopes of 0.11-0.16 V dec(-1) and current on/off ratio of 10(7)-10(8) in a driving voltage of 5 V. This is due to the efficient annealing process that extracting the solvent residue and the formation of low trap-density gate dielectric surface. (C) 2012 Elsevier B. V. All rights reserved.