期刊
ORGANIC ELECTRONICS
卷 13, 期 9, 页码 1686-1692出版社
ELSEVIER
DOI: 10.1016/j.orgel.2012.05.022
关键词
Organic transistor; Complementary circuits; Ink-jet printing; Contact injection; Contact modification; Self-assembled monolayers; Energy delay product
资金
- European Community of the COSMIC project [247681]
Complementary thin-film transistor circuits composed of 6,13-bis(triisopropyl-silylethynyl) pentacene (TIPS-PEN) and a rylene carboxylic diimide derivative for p-and n-channel thin-film transistors (TFTs) were fabricated on flexible foils. The so-called staggered TFT configuration is used, meaning that the semiconductors layers are deposited last. The work-function of the injecting gold electrodes were modified using several self-assembled monolayers (SAMs). For optimized contacts the mobility of the n- and p-channel TFTs was 0.5 cm(2)/Vs and 0.2 cm(2)/Vs, respectively. Strongly degraded performance is obtained when the n-channel material was printed on contacts optimized for the p-channel TFT, and vice versa. This illustrates that for CMOS circuits we need careful work-function engineering to allow proper injection for both electrons and holes. We show for the first time that by using a bimolecular mixture for the SAM we can systematically vary the work function, and demonstrate how this affects the performance of discrete n-type and p-type transistors, as well as CMOS inverters and ring oscillators. Under optimal processing conditions we realized complementary 19-stage ring oscillators with 10 mu s stage delay operating at 20 V. (C) 2012 Elsevier B.V. All rights reserved.
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