期刊
ORGANIC ELECTRONICS
卷 13, 期 12, 页码 3315-3318出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.orgel.2012.10.007
关键词
OTFT; Silk fibroin; F16CuPc
资金
- National Science Council, Republic of China [NSC 100-2221-E-007-067-MY3]
High performance n-type F16CuPc organic thin-film transistors (OTFTs) were fabricated on polyethylene terephthalate (PET) using silk fibroin as the gate dielectric. The average field-effect mobility (mu(FE)) value in the saturation regime is 0.39 cm(2) V-1 s(-1) approximately one order of magnitude higher than the reported values in the literature. A typical F16CuPc OTFT exhibits an on/off current ratio of 9.3 x 10(2), a low threshold voltage of 0.65 V, and a subthreshold swing value of 730 mV/decade. The enhancement of mu(FE) results from very good crystal quality of F16CuPc on silk fibroin, supported by grazing incidence X-ray diffraction (GIXD) data. (C) 2012 Elsevier B.V. All rights reserved.
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