Mobility enhancement by using silk fibroin in F16CuPc organic thin film transistors

High performance n-type F16CuPc organic thin-film transistors (OTFTs) were fabricated on polyethylene terephthalate (PET) using silk fibroin as the gate dielectric. The average field-effect mobility (mu(FE)) value in the saturation regime is 0.39 cm(2) V-1 s(-1) approximately one order of magnitude higher than the reported values in the literature. A typical F16CuPc OTFT exhibits an on/off current ratio of 9.3 x 10(2), a low threshold voltage of 0.65 V, and a subthreshold swing value of 730 mV/decade. The enhancement of mu(FE) results from very good crystal quality of F16CuPc on silk fibroin, supported by grazing incidence X-ray diffraction (GIXD) data. (C) 2012 Elsevier B.V. All rights reserved.