4.6 Article

Nanocrystal V2O5 thin film as hole-extraction layer in normal architecture organic solar cells

期刊

ORGANIC ELECTRONICS
卷 13, 期 12, 页码 3014-3021

出版社

ELSEVIER
DOI: 10.1016/j.orgel.2012.08.007

关键词

Organic solar cell; Vanadium oxide; Nanocrystals; Electrode buffer layer

资金

  1. German Research Foundation (DFG)
  2. Cluster of Excellence 'Engineering of Advanced Materials' at the University of Erlangen-Nuremberg

向作者/读者索取更多资源

Nanocrystal V2O5 dispersion processed thin films are introduced as efficient hole extraction interlayer in normal architecture P3HT:PCBM solar cells. Both thin and rather thick interlayers are studied and demonstrated to work properly in organic photovoltaic. Nanocrystal V2O5V2O5 layers effectively block electrons and effectively extract holes at the ITO anode. Very constant and high V-OC (above 0.56 V) are easily achieved. Comparable J(SC) and PCE are demonstrated for nanocrystal dispersion-processed devices when compared with amorphous sol-gel processed devices. The excellent functionality of nanocrystal V2O5 interlayers in Si-PCPDTBT:PCBM devices further demonstrates the broad application potential of this material class for photovoltaic applications. (C) 2012 Elsevier B.V. All rights reserved.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据