期刊
ORGANIC ELECTRONICS
卷 13, 期 3, 页码 361-365出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.orgel.2011.12.010
关键词
Polymer light-emitting electrochemical cells; p-n Junction; Built-in electric field; Electrochemical doping
资金
- Natural Sciences and Engineering Research Council of Canada
- NSFC, China [61077022]
A millimeter planar polymer light-emitting electrochemical cell was turned on in a cryogenic probe station and subsequently cooled to freeze the doping profile. A 442 nm laser beam guided by an optical fiber was scanned across the interelectrode gap of several millimeters and the photovoltaic response was measured as a function of position. Both photocurrent and photovoltage profiles display a prominent peak at the geometric boundary of the p- and n-doped regions. A non-zero photovoltaic response throughout the p-and n-doped regions can be explained by various broadening mechanisms including non-uniform doping and secondary excitation by waveguided light. The photovoltaic response is weakest at the electrode/polymer interfaces. (C) 2011 Elsevier B. V. All rights reserved.
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