期刊
ORGANIC ELECTRONICS
卷 13, 期 12, 页码 3195-3202出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.orgel.2012.09.012
关键词
Organic solar cells; Solution processed; Graphene oxide; Indium zinc oxide
资金
- Korea Science & Engineering Foundation through the Nano Technology Development Program [2007-02775]
- National Research Foundation of Korea [2007-02775] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We report a solution-processed graphene oxide (GO) functioned as an anode buffer layer in organic photovoltaic cells (OPVs). The OPVs using indium zinc oxide (IZO), IZO/GO, GO/IZO, and poly(3,4-thylenedioxythiophene) doped poly(styrene sulfonate) (PEDOT:PSS) as a control device, exhibited the conversion efficiency of 3.4%, 3.5%, 3.9% and 3.4%, respectively. No obvious degradation was discovered for the OPVs with incorporating GO as one of the anode buffer layers after 1 h continuous illumination under AM1.5. On the other hand, after only 1 h continuous illumination, a momentous degradation was observed for the OPVs without the presence of GO. All these results demonstrate that the GO layer plays an important role in the improvement of the stability with conventional device architecture. (C) 2012 Elsevier B.V. All rights reserved.
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