期刊
ORGANIC ELECTRONICS
卷 12, 期 8, 页码 1319-1327出版社
ELSEVIER
DOI: 10.1016/j.orgel.2011.04.020
关键词
Blend; Organic transistor; Substituted pentacene; Single-droplet ink-jet printing; Contact barrier
资金
- European Community [212311, 216546]
We present a systematic study of the influence of material composition and ink-jet processing conditions on the charge transport in bottom-gate field-effect transistors based on blends of 6,13-bis(triisopropyl-silylethynyl) pentacene (TIPS-PEN) and polystyrene. After careful process optimizations of blending ratio and printing temperature we routinely can make transistors with an average mobility of 1 cm(2)/Vs (maximum value 1.5 cm(2)/Vs), on/off ratio exceeding 10(7), and sharp turn-on in current (sub-threshold slopes approaching 60 mV/decade). These characteristics are superior to the TIPS-PEN only transistors. Using channel scaling measurements and scanning Kelvin probe microscopy, the sharp turn-on in current in the blends is attributed to a contact resistance that originates from a thin insulating layer between the injecting contacts and the semiconductor channel. (C) 2011 Elsevier B.V. All rights reserved.
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