Device architectures for improved amorphous polymer semiconductor thin-film transistors

In this letter, the performance characteristics of single-gate and dual-gate thin-film transistors (TFTs) with amorphous indenofluorene-phenanthrene copolymer semiconductor active layers are reported. Optimized single-gate devices possess mobilities up to 0.15 cm(2)/V-s and width-normalized contact resistance of 1275 Omega cm. These results were obtained through the combination of a recessed source/drain structure and suitable surface treatments of source/drain contact electrodes. The characteristics of dual-gate indenofluorene-phenanthrene copolymer TFTs with polymer gate insulators are also reported. This structure exhibits increased on-current, reduced threshold voltage, improved sub-threshold swing and increased on-off current ratio compared to single-gate architectures. (C) 2011 Elsevier B.V. All rights reserved.