期刊
ORGANIC ELECTRONICS
卷 12, 期 11, 页码 1846-1851出版社
ELSEVIER
DOI: 10.1016/j.orgel.2011.07.014
关键词
Amorphous polymer semiconductor; Contact resistance; Dual-gate geometry; Recessed source/drain structure; Short channel thin-film transistors; Surface treatment
资金
- NSF-ECCS Division
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [1028184] Funding Source: National Science Foundation
In this letter, the performance characteristics of single-gate and dual-gate thin-film transistors (TFTs) with amorphous indenofluorene-phenanthrene copolymer semiconductor active layers are reported. Optimized single-gate devices possess mobilities up to 0.15 cm(2)/V-s and width-normalized contact resistance of 1275 Omega cm. These results were obtained through the combination of a recessed source/drain structure and suitable surface treatments of source/drain contact electrodes. The characteristics of dual-gate indenofluorene-phenanthrene copolymer TFTs with polymer gate insulators are also reported. This structure exhibits increased on-current, reduced threshold voltage, improved sub-threshold swing and increased on-off current ratio compared to single-gate architectures. (C) 2011 Elsevier B.V. All rights reserved.
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