期刊
ORGANIC ELECTRONICS
卷 12, 期 1, 页码 119-124出版社
ELSEVIER
DOI: 10.1016/j.orgel.2010.10.018
关键词
Pentacene TFT; PTFE; Encapsulation layer; OTFT reliability
资金
- Italian Ministry of Research
(Polytetrafluoroethylene) PTFE-like films, deposited by using CHF3/Ar gas mixtures in a plasma reactor, have been used as encapsulation layers in pentacene thin film transistors. The PTFE-like encapsulation layers allow to carry out photolithographic processes without damaging pentacene film. However, the PTFE-like encapsulation layers are not effective in reducing hysteresis of electrical characteristics when measured in air. On the contrary, the degradation of the device electrical characteristics, induced by oxygen diffusion into pentacene film after storing the devices in air, is almost completely suppressed by the encapsulation with the PTFE-like films. (C) 2010 Elsevier B. V. All rights reserved.
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