期刊
ORGANIC ELECTRONICS
卷 12, 期 12, 页码 2207-2214出版社
ELSEVIER
DOI: 10.1016/j.orgel.2011.09.020
关键词
Step-and-flash imprint lithography; Flexible thin film transistor; Foil-on-carrier
资金
- Holst Centre
In this paper the fabrication of flexible thin film transistors (TFTs) on poly(ethylene naphthalate) foil is reported, with the source-drain layer patterned by step-and-flash imprint lithography (SFIL) as a first step towards fully UV-imprinted TFTs. The semiconductor was deposited by inkjet printing of a blend of TIPS-pentacene/polystyrene. The bottom contact, bottom gate TFTs were fabricated with the foil reversibly glued to a carrier, enhancing the dimensional stability and flatness of the foil to result in a thinner and more homogeneously distributed residual layer thickness. The obtained performance of the TFT devices, showing a mobility of mu = 0.56 cm(2) V (1) s (1) with an on/off ratio of >10(7) and near-zero threshold voltage, was found to be in good agreement with similar, photolithographically patterned state-of-the-art devices recently reported in literature. The results presented here show the feasibility of SFIL as a roll-to-roll compatible and down scalable patterning technique on flexible PEN foil for the fabrication of bottom-gate, bottom-contact flexible high-quality TFTs. (C) 2011 Elsevier B.V. All rights reserved.
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