期刊
ORGANIC ELECTRONICS
卷 12, 期 7, 页码 1271-1274出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.orgel.2011.04.010
关键词
Organic memory; WORM; PEDOT:PSS; ZnO nanoparticle; Solution process; Inkjet printing
资金
- Cambridge Display Technology Ltd.
- Engineering and Physical Sciences Research Council [EP/E023614/1] Funding Source: researchfish
- EPSRC [EP/E023614/1] Funding Source: UKRI
We investigate the mechanism of operation of low-power write-once-read-many-times (WORM) memory devices based on injection of electrons from ZnO into PEDOT:PSS (polydioxythiophene doped with polystyrenesulfonic acid). Using Raman spectroscopy and in situ absorbance measurements, we directly observe the change of doping level of PEDOT during the device switching. Our results clearly show that the change of device conductance is due to the dedoping of p-doped PEDOT by injected electrons. Based on this understanding, we further demonstrate an entirely solution-processed low-power WORM device by inkjet printing metal electrodes onto arbitrary substrates. (C) 2011 Elsevier B.V. All rights reserved.
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