期刊
ORGANIC ELECTRONICS
卷 11, 期 5, 页码 925-932出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.orgel.2010.02.012
关键词
Flexible electronics; Ferroelectric polymer; Non-volatile memory; P(VDF-TrFE)
资金
- Army Research Laboratory (ARL)
The impact of thermal treatment and thickness on the polarization and leakage current of poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] copolymer thin film capacitors has been studied. The evolution of the film morphology, crystallinity and bonding orientation as a function of annealing temperature and thickness were characterized using multiple techniques. Electrical performance of the devices was correlated with the material properties. It was found that annealing at or slightly above the Curie temperature (T(c)) is the optimal temperature for high polarization, smooth surface morphology and low leakage current. Higher annealing temperature (but below the melting temperature T(m)) favors larger size beta crystallites through molecular chain self-organization, resulting in increased film roughness, and the vertical polarization tends to saturate. Metal-Ferroelectric-Metal (MFM) capacitors consistently achieved P(s), P(r) and V(c) of 8.5 mu C/cm(2), 7.4 mu C/cm(2) and 10.2 V, respectively. Published by Elsevier B.V.
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