期刊
ORGANIC ELECTRONICS
卷 11, 期 7, 页码 1307-1312出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.orgel.2010.04.002
关键词
Patterning; PEDOT:PSS; Interlayer lithography; Organic transistor
资金
- EPSRC [EP/C539516]
- Royal Society
We report the use of interlayer lithography for the micron-scale patterning of high conductivity poly(3,4-ethylendioxythiophene):poly(styrenesulfonate) (PEDOT:PSS). The interlayer method was used to fabricate PEDOT: PSS source and drain electrodes with conductivities > 360 S/cm and pattern gaps >= 4 mu m for top-gate/bottom-contact organic field-effect transistors (OFETs). p-Type OFETs based on 2,8-difluoro-5,11-bis(triethylsilylethynyl)-anthradithiophene (diF-TESADT) and blends of diF-TESADT with poly(tri-arylamine) (PTAA) exhibited high hole mobilities of up to 1 and 0.25 cm(2)/V s, respectively, while ambipolar OFETs based on methanofullerene [6,6]-phenyl-C-61-butyric acid methyl-ester (PCBM) exhibited respective electron and hole mobilities of 0.05 and 0.005 cm(2)/V s. Complementary voltage inverters based on the diF-TESADT/PTAA and PCBM OFETs exhibited excellent operating characteristics with wide noise margin and high signal gain, indicating that the interlayer method offers a viable route to cost efficient, solution-processed, and flexible organic electronics. (c) 2010 Elsevier B.V. All rights reserved.
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