4.6 Article

Heteroepitaxy growth high performance films of perylene diimide derivatives

期刊

ORGANIC ELECTRONICS
卷 11, 期 2, 页码 195-201

出版社

ELSEVIER
DOI: 10.1016/j.orgel.2009.10.014

关键词

Organic semiconductor films; Perylene diimide derivatives; Heteroepitaxy; Organic thin film transistors; Weak epitaxy growth

资金

  1. National Natural Science Foundation of China [50773079, 50803063]
  2. The National Basic Research Program [2009CB939702]

向作者/读者索取更多资源

High performance films of phenyl substituted perylene diimide are obtained by heteroepitaxy growth through Weak Epitaxy Growth technique. As epitaxially grown on the para-sexiphenyl (p-6P) ordered layers, the N,N'-di-phenyl perylene tetracarboxylic diimide (PTCDI-Ph) grows to form continuous and highly oriented films with large grain size, which possess low density of grain boundary and smooth surface. This quality films bring about improvement of two orders of magnitude in mobility compare to the traditional films, and present relative good air stability. Ambipolar transport behavior was also observed as tuning the thickness of p-6P. (C) 2009 Elsevier B.V. All rights reserved.

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