期刊
ORGANIC ELECTRONICS
卷 11, 期 1, 页码 89-94出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.orgel.2009.10.003
关键词
Transition metal oxides, Charge injection; Organic semiconductor; Injection efficiency
资金
- Research Grant Council of Hong Kong
- Research Committee of Hong Kong Baptist University [HKBU211107E, HKBU211209E, FRG/07-08/II-66]
Oxygen or air exposure to transition metal oxides (TMOs) was demonstrated to be essential in improving the hole injection (HI) efficiency at the contact formed by TMOs and small organic hole transporter. Current-voltage (J-V) and dark-injection space-charge-limited current (DI-SCLC) techniques were used to cross-examine the TMO/organic contacts. The hole transporter under investigation was N,N'-diphenyl-N,N'-bis(1-naphthyl)(1,1'biphenyl)-4,4'diamine (NPB). The improvement was attributed to the reduction in the energy barrier at TMO/NPB interface, which was a consequence of the work function enhancement of TMO by the oxidation of oxygen in air. (C) 2009 Elsevier B.V. All rights reserved.
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