期刊
ORGANIC ELECTRONICS
卷 11, 期 8, 页码 1333-1337出版社
ELSEVIER
DOI: 10.1016/j.orgel.2010.05.007
关键词
Pentacene; Organic; Thin-film transistor; Density-of-states
资金
- Spanish government [CSD2007-07]
- European Community [227127]
- Generalitat of Catalunya
In this work the density-of-states in the gap of pentacene is calculated from the electrical characteristics of thin-film transistors measured at different temperatures. The density-of-states after a thermal annealing in vacuum (110 degrees C for 1 h) was clearly different from the as deposited state. A deep level located 0.49 eV above the valence band edge completely disappeared after the annealing. This level could be related to water molecules adsorbed onto the gate dielectric during the fabrication process. Besides, a broad Gaussian distribution centered around 0.28 eV from the valence band was resolved after the annealing. These states could be related to oxygen atoms chemically bonded to adjacent pentacene molecules. The thermal treatment also contributes to reduce structural disorder, as deduced from a thinned band tail. (C) 2010 Elsevier B.V. All rights reserved.
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