期刊
ORGANIC ELECTRONICS
卷 10, 期 5, 页码 769-774出版社
ELSEVIER
DOI: 10.1016/j.orgel.2009.03.011
关键词
Organic thin film transistor; Memory; Conjugated polymers; Quantum dot; Core/shell
资金
- National Science Council of Taiwan [NSC 97-2120-M-009-006, NSC97-2218E009-004]
An optical programming/electrical erasing memory device was fabricated by adopting organic thin film transistors incorporating core/shell CdSe@ZnSe quantum dots (QDs) and poly(3-hexylthiophene) (P3HT) as active layers. After illumination, the presence of quantum well-structured core/shell CdSe@ZnSe QDs within the P3HT film enhanced the maximum ON/OFF ratio substantially to 2700; this value was maintained for 8000 s without noticeable decay. The ON state current could be erased effectively when using a single pulse of the gate voltage (- 10 V). This fabrication approach opens up the possibility of improving the memory performance of polymeric materials prepared at low cost using simple processes, (C) 2009 Elsevier B.V. All rights reserved.
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