High-performance n-type organic field-effect transistors fabricated by ink-jet printing using a C60 derivative

We report on the performance of ink-jet-printed n-type organic thin-film transistors (OTFTs) based on a C-60 derivative, namely, C-60-fused N-methyl-2-(3-hexylthiophen-2-yl)pyrrolidine (C60TH-Hx). The new devices exhibit excellent n-channel performance, with a highest mobility of 2.8 x 10(-2) cm(2) V-1 s(-1), an I-on/I-off ratio of about 1 x 10(6), and a threshold voltage of 7 V. The C60TH-Hx films show large crystalline domains that result from the influence of an evaporation-induced flow, thus leading to high electron mobility in the ink-jet-printed devices. (C) 2009 Elsevier B.V. All rights reserved.