期刊
ORGANIC ELECTRONICS
卷 10, 期 1, 页码 174-180出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.orgel.2008.10.021
关键词
Organic field-effect transistor; Polymer gate dielectrics
资金
- Engineering and Physical Sciences Research Council (EPSRC)
- Korea Evaluation Institute of Industrial Technology (KEIT) [KI001909] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National IT Industry Promotion Agency (NIPA), Republic of Korea [A1100-0801-2990] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We have demonstrated top-gate polymer field-effect transistors (FETs) with ultra-thin (3050 nm), room-temperature crosslinkable polymer gate dielectrics based on blending an insulating base polymer such as poly(methyl methacrylate) with an organosilane crosslinking agent, 1.6-bis(trichlorosilyl)hexane. The top-gate polymer transistors with thin gate dielectrics were operated at gate voltages less than -8 V with a relatively high dielectric breakdown strength (>3 MV/cm) and a low leakage current (10-100 nA/mm(2) at 2 MV/cm). The yield of thin gate dielectrics in top-gate polymer FETs is correlated with the roughness of underlying semiconducting polymer film. High mobilities of 0.1-0.2 cm(2) V s and on and off state current ratios of 104 were achieved with the high performance semiconducting polymer, poly(2,5-bis(3-alkylthiophen-2yl)thieno[3,2-b]thiophene. (C) 2008 Elsevier B.V. All rights reserved.
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