4.6 Article

Hybridization of a low-temperature processable polyimide gate insulator for high performance pentacene thin-film transistors

期刊

ORGANIC ELECTRONICS
卷 9, 期 5, 页码 711-720

出版社

ELSEVIER
DOI: 10.1016/j.orgel.2008.05.003

关键词

organic gate insulator; polyimide; pentacene thin-film transistor; hybridization

资金

  1. Korean Ministry of Science and Technology

向作者/读者索取更多资源

We have synthesized a novel fully soluble and low-temperature processable polyimide gate insulator (KSPI) through the one-step condensation polymerization of the monomers 5-(2,5-dioxytetrahydrofuryl)-3-methyl-3-cyclohexene-1,2-dicarboxylic anhydride and 4,4-diaminodiphenylmethane. Fully imidized KSPI was found to be completely soluble in organic solvents such as N-methyl-2-pyrrolidone (NMP), dimethylacetamide (DMAc), gamma-butyrolactone, dimethylsulfoxide (DMSO), and 2-butoxyethanol. Thin films of KSPI can be fabricated at only 150 degrees C and a pentacene OTFT with KSPI as a gate dielectric was found to exhibit a field effect mobility of 0.22 cm(2)/V s. To obtain a high performance organic thin-film transistor (OTFT), the KSPI surface was modified in our new technique by hybridization with a non-polar side chain containing a polyimide insulator (PI). The carrier mobility of a pentacene OTFT with a hybridized polyimide gate insulator (BPI-3) was found to be 0.92 cm(2)/V S. Our new low-temperature processable polyimides show promise as gate dielectrics for OTFTs. (C) 2008 Elsevier B.V. All rights reserved.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据