期刊
THIN SOLID FILMS
卷 589, 期 -, 页码 822-830出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2015.07.027
关键词
Nanoindentation; Delamination; Cyclic loading; Energy release rate
类别
资金
- WIN Semiconductor Co. [013972]
- Australian Research Council (ARC) [FT110100557]
- ARC under the Future Fellow Program
- Australian Research Council [FT110100557] Funding Source: Australian Research Council
Our previous study developed a dual-indentation method for testing the interfacial energy release rate, Gin, of the SiN/GaAs film/substrate systems. However, for the film/substrate systems with relatively high interfacial toughness, the dual-indentation method was unable to generate interfacial delamination. In this study, a cyclic loading dual-indentation method was proposed, in which the first monotonic loading in the dual-indentation method was replaced by cyclic loading. It was demonstrated that cyclic loading was effective at inducing delamination in relatively tough SiN/GaAs interfaces that were unable to be delaminated by dual-indentation method. The Gin values obtained from the cyclic loading indentation were in good agreement with those obtained from the dual-indentation method for the less tough interfaces. The delamination mechanism in the cyclic loading indentation was attributed to the hardening effect on the films induced by cyclic loading, permitting sufficient elastic strain energy to be accumulated to initiate the delamination. (C) 2015 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据