Development of crack free BLT thick films by chemical solution deposition technique

Crack free (Bi3.25La0.75Ti3O12) BLT film of similar to 1 mu m thickness was deposited on Pt/Si(100) wafer by sol-gel methodology using a polymeric additive: polyvinyl pyrrolidone. The remnant polarization and coercive field values measured from the P-E hysteresis loops for BLT films annealed at 650 degrees C and 700 degrees C were 10 mu C/cm(2), 110 kV/cm and 11.5 mu C/cm(2), 111.5 kV/cm, respectively. The leakage current in the BLT film was remarkably low up to an electric field of 150 kV/cm for which the measured leakage current density was 2.5 x 10(-6) A/cm(2). The leakage current behavior showed Ohmic conduction in the low-field region and was dominated by space charge in the high-field region. (C) 2015 Elsevier B.V. All rights reserved.