期刊
THIN SOLID FILMS
卷 579, 期 -, 页码 136-143出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2015.02.060
关键词
Tetrafluoromethane; Perfluorocyclobutane; Plasma diagnostics; Modeling; Reaction kinetics; Plasma modeling
类别
资金
- Industrial Strategic Technology Development Program - Ministry of Knowledge Economy (MKE, Republic of Korea) [10041681]
- Korea Evaluation Institute of Industrial Technology (KEIT) [10041681] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [22A20130012676] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
The effect of the O-2/Ar mixing ratio in CF4/O-2/Ar and C4F8/O-2/Ar inductively coupled plasmas with a 50% fluorocarbon gas content on plasma parameters and active species densities, which influence dry etching mechanisms, was analyzed. The investigation combined plasma diagnostics using Langmuir probes and zero-dimensional plasma modeling. It was found that, in both gas systems, the substitution of Ar for O-2 results in a similar change in the ion energy flux but causes the opposite behavior for the F atom flux. The mechanisms of these phenomena are discussed with regards to plasma chemistry. (C) 2015 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据