Study of photoluminescence quenching in porous silicon layers that using for chemical solvents vapor sensor

In this work chemical vapor sensors for Ethanol, chloroform and n-Hexane were fabricated by porous silicon (PS). PS samples were prepared by electrochemical etching (ECE) method with different current density J = 2, 4 and 6 mA/cm(2) and etching time 15 min and HF concentration 15%. Ordered porous silicon p-type (111) is thoroughly studied as an The structure, chemical composition and surface bond configuration of PS layer has been characterized by X-ray diffraction (XRD), Atomic Force Microscopic (AFM) and a Fourier Transform Infrared Spectroscopy (FTIR) and Photoluminescence (PL) quenching measurement were conducted using mixture nitrogen gas and vapor of n-Hexane, chloroform and ethanol, where prepared to test the sensor response towards the chemical organic solvents. The results refer to the PS surface is good sensing for chemical vapor. Its were also found that a higher PL quenching value for Ethanol compared with the value of n-Hexane and chloroform vapors.