相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Design and fabrication of antireflective GaN subwavelength grating structures using periodic silica sphere monolayer array patterning
Yeong Hwan Ko et al.
APPLIED PHYSICS B-LASERS AND OPTICS (2013)
On the Radiation Profiles and Light Extraction of Vertical LEDs With Hybrid Nanopattern and Truncated Microdome Surface Textures
Yu-Ting Wang et al.
IEEE JOURNAL OF QUANTUM ELECTRONICS (2013)
Effects of light extraction efficiency to the efficiency droop of InGaN-based light-emitting diodes
Yiyun Zhang et al.
JOURNAL OF APPLIED PHYSICS (2013)
Improved performance of GaN-based vertical light emitting diodes with conducting and transparent single-walled carbon nanotube networks
Su Jin Kim et al.
OPTICS EXPRESS (2013)
Dependence of efficiencies in GaN-based vertical blue light-emitting diodes on the thickness and doping concentration of the n-GaN layer
Han-Youl Ryu et al.
OPTICS EXPRESS (2013)
Tunable clover-shaped GaN photonic bandgap structures patterned by dual-step nanosphere lithography
K. H. Li et al.
APPLIED PHYSICS LETTERS (2012)
Electroluminescence from quantum dots fabricated with nanosphere lithography
L. Yu et al.
APPLIED PHYSICS LETTERS (2012)
Increased Light Extraction From Vertical GaN Light-Emitting Diodes With Ordered, Cone-Shaped Deep-Pillar Nanostructures
Ho-Myoung An et al.
IEEE JOURNAL OF QUANTUM ELECTRONICS (2012)
Optimizing textured structures possessing both optical gradient and diffraction properties to increase the extraction efficiency of light-emitting diodes
Chan-Wei Hsu et al.
PHOTONICS AND NANOSTRUCTURES-FUNDAMENTALS AND APPLICATIONS (2012)
Advances in the LED Materials and Architectures for Energy-Saving Solid-State Lighting Toward Lighting Revolution
S. T. Tan et al.
IEEE PHOTONICS JOURNAL (2012)
Structural Parameter Dependence of Light Extraction Efficiency in Photonic Crystal InGaN Vertical Light-Emitting Diode Structures
Han-Youl Ryu et al.
IEEE JOURNAL OF QUANTUM ELECTRONICS (2010)
High Brightness GaN Vertical Light-Emitting Diodes on Metal Alloy for General Lighting Application
Chen-Fu Chu et al.
PROCEEDINGS OF THE IEEE (2010)
Removing plasma-induced sidewall damage in GaN-based light-emitting diodes by annealing and wet chemical treatments
Y. Yang et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2009)
III-nitride photonic-crystal light-emitting diodes with high extraction efficiency
Jonathan J. Wierer et al.
NATURE PHOTONICS (2009)
Enhanced light output power of GaN-based vertical-injection light-emitting diodes with a 12-fold photonic quasi-crystal by nano-imprint lithography
H. W. Huang et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2009)
Optical response from lenslike semiconductor nipple arrays
H-M. Wu et al.
APPLIED PHYSICS LETTERS (2008)
Enhancement of InGaN-Based vertical LED with concavely patterned surface using patterned sapphire substrate
Jae-Hoon Lee et al.
IEEE PHOTONICS TECHNOLOGY LETTERS (2008)
An improved non-alloyed ohmic contact Cr/Ni/Au to n-type GaN with surface treatment
Hyun Kyong Cho et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2008)
Investigation of GaN-based vertical-injection light-emitting diodes with GaN nano-cone structure by ICP etching
H. W. Huang et al.
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS (2008)
Effect of surface treatment on the performance of vertical-structure GaN-based high-power light-emitting diodes with electroplated metallic substrates
Kai-Ming Uang et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS (2006)
Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening
T Fujii et al.
APPLIED PHYSICS LETTERS (2004)
GaNN- and P-type Schottky diodes: Effect of dry etch damage
XA Cao et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2000)