相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Effects of point defect healing on phosphorus implanted germanium n+/p junction and its thermal stability
Jaewoo Shim et al.
JOURNAL OF APPLIED PHYSICS (2013)
310 GHz gain-bandwidth product Ge/Si avalanche photodetector for 1550 nm light detection
Ning Duan et al.
OPTICS EXPRESS (2012)
Experiments and simulation of the diffusion and activation of the n-type dopants P, As, and Sb implanted into germanium
S. Koffel et al.
MICROELECTRONIC ENGINEERING (2011)
Reinventing germanium avalanche photodetector for nanophotonic on-chip optical interconnects
Solomon Assefa et al.
NATURE (2010)
Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product
Yimin Kang et al.
NATURE PHOTONICS (2009)
Ge-Si separate absorption and multiplication avalanche photodiode for Geiger mode single photon detection
M. S. Carroll et al.
APPLIED PHYSICS LETTERS (2008)
Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface
Tomonori Nishimura et al.
APPLIED PHYSICS LETTERS (2007)