4.6 Article

ITO/Ag/ITO multilayer-based transparent conductive electrodes for ultraviolet light-emitting diodes

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OPTICS LETTERS
卷 38, 期 23, 页码 5055-5058

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OPTICAL SOC AMER
DOI: 10.1364/OL.38.005055

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  1. National Research Foundation of Korea (NRF)
  2. Korean Government (MEST) [2011-0028769]
  3. LG Innotek Co., Korea

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ITO/Ag/ITO (IAI) multilayer-based transparent conductive electrodes for ultraviolet light-emitting diodes are fabricated by reactive sputtering, optimized by annealing, and characterized with respect to electrical and optical properties. Increasing the annealing temperature from 300 degrees C to 500 degrees C decreased the sheet resistance and increased the transmittance. This may result from an observed improvement in the crystallinity of the IAI multilayer and a reduction in the near-UV absorption coefficient of Ag. We observed the lowest sheet resistance (9.21 Omega/sq) and the highest optical transmittance (88%) at 380 nm for the IAI multilayer samples annealed in N-2 gas at 500 degrees C. (C) 2013 Optical Society of America

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