期刊
OPTICS LETTERS
卷 36, 期 21, 页码 4158-4160出版社
OPTICAL SOC AMER
DOI: 10.1364/OL.36.004158
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- Engineering and Physical Sciences Research Council [EP/F001428/1, EP/E065317/1, EP/F002548/1] Funding Source: researchfish
- EPSRC [EP/E065317/1, EP/F002548/1, EP/F001428/1] Funding Source: UKRI
We report modulation of the absorption coefficient at 1: 3 mu m in Ge/SiGe multiple quantum well heterostructures on silicon via the quantum-confined Stark effect. Strain engineering was exploited to increase the direct optical bandgap in the Ge quantum wells. We grew 9 nm-thick Ge quantum wells on a relaxed Si(0.22)Ge(0.78) buffer and a contrast in the absorption coefficient of a factor of greater than 3.2 was achieved in the spectral range 1290-1315nm. (C) 2011 Optical Society of America
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