Pr : YAlO3 microchip laser

A cw Pr:YAlO3 microchip-laser operation in the near-IR spectral region is reported. A microchip resonator was formed by dielectric mirrors directly deposited on the Pr : YAlO3 crystal surfaces. For active medium pumping, a GaN laser diode providing up to 1 W of output power at similar to 448 nm was used. 139 mW of laser radiation at 747 nm wavelength has been extracted from the microchip-laser system. Slope efficiency related to the incident pumping power was similar to 25%. (C) 2010 Optical Society of America