期刊
OPTICS LETTERS
卷 34, 期 9, 页码 1345-1347出版社
OPTICAL SOC AMER
DOI: 10.1364/OL.34.001345
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资金
- Defense Advanced Research Projects Agency (DARPA) [N6600107-1-2058, HR0011-04-1-0054]
- U.S. Air Force Office of Scientific Research (AFOSR) [FA955006-1-0480]
- Center for Science and Engineering of Materials
- National Science Foundation (NSF)
- Center for the Physics of Information, Caltech
- Yad-Hanadiv Foundation, Israel
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [0835106] Funding Source: National Science Foundation
Hybrid Si/III-V, Fabry-Perot evanescent lasers are demonstrated, utilizing InGaAsP as the III-V gain material for the first time to our knowledge. The lasing threshold current of 300-mu m-long devices was as low as 24 mA, with a maximal single facet output power of 4.2 mW at 15 degrees C. Longer devices achieved a maximal single facet output power as high as 12.7 mW, a single facet slope efficiency of 8.4%, and a lasing threshold current density of 1 kA/cm(2). Continuous wave laser operation was obtained up to 45 degrees C. The threshold current density, output power, and efficiency obtained improve upon those of previously reported devices having a similar geometry. Facet images indicate that the output light is largely confined to the Si waveguide. (C) 2009 Optical Society of America
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