期刊
OPTICS EXPRESS
卷 26, 期 17, 页码 22123-22134出版社
OPTICAL SOC AMER
DOI: 10.1364/OE.26.022123
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类别
资金
- Science and Technology Project of Guangdong Province, China [2015B010132008, 2015A030311050, 2016B090918106, 2016B010129002, 2017B090911002]
- Science and Technology Planning Project of Guangzhou, China [201607020036, 201804020051]
- Fundamental Research Funds for the Central Universities [20177612031650012]
In this work, high mobility indium tin oxide (ITO) thin films with uniform crystallographic orientation are prepared. These films present a wide-range transmittance window and could be used as transparent electrodes at ultraviolet-visible-infrared wavelengths. In particular, the ITO thin film is characterized by low resistivity (5.1 x 10(-4) Omega cm) and high infrared transmittance (88.5% at 2.5 mu m) due to the improved mobility, achieving higher infrared performance than other transparent conductive materials. A model based on carrier's transport theory and Lorentz-Drude dielectric function is proposed to quantitatively calculate the optical performance of conductive thin films under the influence of plasma effect. The calculation demonstrates that ITO is a suitable electrode material for near/middle infrared optoelectronic applications. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
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