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Color-tunable, phosphor-free InGaN nanowire light-emitting diode arrays monolithically integrated on silicon

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OPTICS EXPRESS
卷 22, 期 25, 页码 A1768-A1775

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OPTICAL SOC AMER
DOI: 10.1364/OE.22.0A1768

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  1. Samsung Corporation
  2. Natural Sciences and Engineering Research Council of Canada

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We demonstrate controllable and tunable full color light generation through the monolithic integration of blue, green/yellow, and orange/red InGaN nanowire light-emitting diodes (LEDs). Such multi-color nanowire LED arrays are fabricated directly on Si substrate using a three-step selective area molecular beam epitaxy growth process. The lateral-arranged multi-color subpixels enable controlled light mixing at the chip-level and yield color-tunable light emission with CCT values in the range from 1900 K to 6800 K, while maintaining excellent color rendering capability. This work provides a viable approach for achieving micron and nanoscale tunable full-color LED arrays without the compromise between the device efficiency and light quality associated with conventional phosphor-based LEDs. (C) 2014 Optical Society of America

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