Directly modulated buried heterostructure DFB laser on SiO2/Si substrate fabricated by regrowth of InP using bonded active layer

We describe the growth of InP layer using an ultrathin III-V active layer that is directly bonded to SiO2/Si substrate to fabricate a buried heterostructure (BH) laser. Using a 250-nm-thick bonded active layer, we succeeded in fabricating a BH distributed feedback (DFB) laser on SiO2/Si substrate. The use of a lateral current injection structure is important for forming a p-i-n junction using bonded thin film. The fabricated DFB laser is directly modulated by a 25.8-Gbit/s NRZ signal at 50 degrees C. These results indicate that our fabrication method is a promising way to fabricate highefficiency lasers at a low cost. (C)2014 Optical Society of America