期刊
OPTICS EXPRESS
卷 22, 期 25, 页码 30983-30991出版社
OPTICAL SOC AMER
DOI: 10.1364/OE.22.030983
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资金
- Department of Science and Technology (DST) Fast Track Scheme for Young Scientist [SR/FTP/ETA-101/2010]
- DST Science and Engineering Research Board (SERB) [SR/S3/EECE/0142/2011]
- Council of Scientific and Industrial Research (CSIR) [22(0608)/12/EMRII]
p-type Sb-doped ZnO/i-CdZnO/n-type Ga-doped ZnO was grown by dual ion beam sputtering deposition system. Current-voltage characteristics of the heterojunction showed a diode-like rectifying behavior with a turn-on voltage of similar to 5 V. The diode yielded blue electroluminescence emissions at around 446 nm in forward biased condition at room temperature. The emission intensity increased with the increase of the injection current. A red shifting of the emission peak position was observed with the increment of ambient temperature, indicating a change of band gap of the CdZnO active layer with temperature in low-temperature measurement. (C) 2014 Optical Society of America
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