4.6 Article

GaN-based light-emitting diodes on graphene-coated flexible substrates

期刊

OPTICS EXPRESS
卷 22, 期 9, 页码 A812-A817

出版社

OPTICAL SOC AMER
DOI: 10.1364/OE.22.00A812

关键词

-

类别

资金

  1. LG Innotek-Korea University Nano-Photonics Program
  2. Center for Inorganic Photovoltaic Materials - Korea government (MEST), a Korea University [2012-0001171]
  3. Human Resources Development program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) by the Korea government Ministry of Trade, Industry and Energy [20124030200120]
  4. NSF [1159682]
  5. Directorate For Engineering
  6. Div Of Electrical, Commun & Cyber Sys [1159682] Funding Source: National Science Foundation

向作者/读者索取更多资源

We demonstrate GaN-based thin light-emitting diodes (LEDs) on flexible polymer and paper substrates covered with chemical vapor deposited graphene as a transparent-conductive layer. Thin LEDs were fabricated by lifting the sapphire substrate off by Excimer laser heating, followed by transfer of the LEDs to the flexible substrates. These substrates were coated with tri-layer graphene by a wet transfer method. Optical and electrical properties of thin laser lift-offed LEDs on the flexible substrates were characterized under both relaxed and strained conditions. The graphene on paper substrates remained conducting when the graphene/paper structure was folded. The high transmittance, low sheet resistance and high failure strain of the graphene make it an ideal candidate as the transparent and conductive layer in flexible optoelectronics. (C) 2014 Optical Society of America

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据