期刊
OPTICS EXPRESS
卷 20, 期 20, 页码 22224-22232出版社
OPTICAL SOC AMER
DOI: 10.1364/OE.20.022224
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- DARPA [HR0011-08-09-0001]
We demonstrate a high speed GeSi electro-absorption (EA) modulator monolithically integrated on 3 mu m silicon-on-insulator (SOI) waveguide. The demonstrated device has a compact active region of 1.0 x 55 mu m(2), an insertion loss of 5 dB and an extinction ratio of 6 dB at wavelength of 1550 nm. The modulator has a broad operating wavelength range of 35 nm and a 3 dB bandwidth of 40.7 GHz at 2.8 V reverse bias. This compact and energy efficient modulator is a key building block for optical interconnection applications. (C) 2012 Optical Society of America
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